Beschreibung:
<jats:p>N p junction photovoltaic detectors in the p-type single-crystal SnS have been produced by Sb+ ion implantation. Current-voltage and capacitance-voltage characteristics have been measured at 77 and 295 K. At 77 K, diodes had zero-bias resistance area products of 1.5×103 W cm2. The spectral response has been measured at 77 and 295 K. At 295 K, the peak responsivity was at a wavelength of 0.76 mm. At 77 K, the peak detectivity, which occurred at 0.62 mm, was 1.3×1011 cm Hz1/2 W−1 with a peak quantum efficiency of 44%.</jats:p>