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Prucnal, Slawomir; Liedke, Maciej O; Wang, Xiaoshuang; Butterling, Maik; Posselt, Matthias; Knoch, Joachim; Windgassen, Horst; Hirschmann, Eric; Berencén, Yonder; Rebohle, Lars; Wang, Mao; Napolitani, Enrico; Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovani; Hübner, René; Wagner, Andreas; Bracht, Hartmut; Helm, Manfred; Zhou, Shengqiang

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

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  • Medientyp: E-Artikel
  • Titel: Dissolution of donor-vacancy clusters in heavily doped n-type germanium
  • Beteiligte: Prucnal, Slawomir; Liedke, Maciej O; Wang, Xiaoshuang; Butterling, Maik; Posselt, Matthias; Knoch, Joachim; Windgassen, Horst; Hirschmann, Eric; Berencén, Yonder; Rebohle, Lars; Wang, Mao; Napolitani, Enrico; Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovani; Hübner, René; Wagner, Andreas; Bracht, Hartmut; Helm, Manfred; Zhou, Shengqiang
  • Erschienen: IOP Publishing, 2020
  • Erschienen in: New Journal of Physics, 22 (2020) 12, Seite 123036
  • Sprache: Ohne Angabe
  • DOI: 10.1088/1367-2630/abc466
  • ISSN: 1367-2630
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: Abstract The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (D n V with n ⩽ 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance–voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.
  • Zugangsstatus: Freier Zugang