> Detailanzeige

Prucnal, Slawomir; Liedke, Maciej O; Wang, Xiaoshuang; Butterling, Maik; Posselt, Matthias; Knoch, Joachim; Windgassen, Horst; Hirschmann, Eric; Berencén, Yonder; Rebohle, Lars; Wang, Mao; Napolitani, Enrico; Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovani; Hübner, René; Wagner, Andreas; Bracht, Hartmut; Helm, Manfred; Zhou, Shengqiang

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Literatur-
verwaltung

Zur
Merkliste

Lösche von
Merkliste

Per Whatsapp teilen

Schließen

Merkliste



Sie können Bookmarks mittels Listen verwalten, loggen Sie sich dafür bitte in Ihr SLUB Benutzerkonto ein.
  • Medientyp: E-Artikel
  • Titel: Dissolution of donor-vacancy clusters in heavily doped n-type germanium
  • Beteiligte: Prucnal, Slawomir; Liedke, Maciej O; Wang, Xiaoshuang; Butterling, Maik; Posselt, Matthias; Knoch, Joachim; Windgassen, Horst; Hirschmann, Eric; Berencén, Yonder; Rebohle, Lars; Wang, Mao; Napolitani, Enrico; Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovani; Hübner, René; Wagner, Andreas; Bracht, Hartmut; Helm, Manfred; Zhou, Shengqiang
  • Erschienen: IOP Publishing, 2020
  • Erschienen in: New Journal of Physics
  • Sprache: Nicht zu entscheiden
  • DOI: 10.1088/1367-2630/abc466
  • ISSN: 1367-2630
  • Schlagwörter: General Physics and Astronomy
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: <jats:title>Abstract</jats:title> <jats:p>The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (D<jats:sub> <jats:italic>n</jats:italic> </jats:sub>V with <jats:italic>n</jats:italic> ⩽ 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P<jats:sub>4</jats:sub>V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P<jats:sub>4</jats:sub>V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance–voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.</jats:p>
  • Zugangsstatus: Freier Zugang