Wafer-scale 30° twisted bilayer graphene epitaxially grown on Cu0.75Ni0.25 (111)

Medientyp: E-Artikel

Titel: Wafer-scale 30° twisted bilayer graphene epitaxially grown on Cu0.75Ni0.25 (111)

Beteiligte: Ma 马, Peng-Cheng 鹏程; Zhang 张, Ao 翱; Zhen 甄, Hong-Run 洪润; Jiang 江, Zhi-Cheng 志诚; Yang 杨, Yi-Chen 逸尘; Ding 丁, Jian-Yang 建阳; Liu 刘, Zheng-Tai 正太; Liu 刘, Ji-Shan 吉山; Shen 沈, Da-Wei 大伟; Yu 于, Qing-Kai 庆凯; Liu 刘, Feng 丰; Zhang 张, Xue-Fu 学富; Liu 刘, Zhong-Hao 中灏

Erschienen: IOP Publishing, 2024

Sprache: Nicht zu entscheiden

DOI: 10.1088/1674-1056/ad2d53

ISSN: 1674-1056; 2058-3834

Entstehung:

Anmerkungen:

Beschreibung: Twisted bilayer graphene (TBG) has been extensively studied because of its novel physical properties and potential application in electronic devices. Here we report the synthesis and characterization of 30° TBG naturally grown on Cu0.75Ni0.25 (111) film and investigate the electronic structure by angle-resolved photoemission spectroscopy. Compared with other substrates, our TBG with a wafer scale is acquired with a shorter growth time. The Fermi velocity and energy gap of Dirac cones of TBG are comparable with those of a monolayer on Cu0.85Ni0.15 (111). The signature of moiré lattices has not been observed in either the low-energy electron diffraction patterns or the Fermi surface map within experimental resolution, possibly due to different Cu and Ni contents in the substrates enhancing the different couplings between the substrate and the first/second layers and hindering the formation of a quasiperiodic structure.

Nur in Feld suchen:

Zuletzt gesuchte Begriffe: