Huge operation by energy gap of novel narrow band gap Tl1−xIn1−xBxSe2(B = Si, Ge): DFT, x-ray emission and photoconductivity studies

Medientyp: E-Artikel
Titel: Huge operation by energy gap of novel narrow band gap Tl1−xIn1−xBxSe2(B = Si, Ge): DFT, x-ray emission and photoconductivity studies
Beteiligte: Piasecki, M; Myronchuk, G L; Zamurueva, O V; Khyzhun, O Y; Parasyuk, O V; Fedorchuk, A O; Albassam, A; El-Naggar, A M; Kityk, I V
Erschienen: IOP Publishing, 2016
Erschienen in: Materials Research Express
Sprache: Nicht zu entscheiden
DOI: 10.1088/2053-1591/3/2/025902
ISSN: 2053-1591
Schlagwörter: Metals and Alloys ; Polymers and Plastics ; Surfaces, Coatings and Films ; Biomaterials ; Electronic, Optical and Magnetic Materials
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