Beschreibung:
<jats:p>pn‐Heterodiodes comprising the wide bandgap semiconducting oxide In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and amorphous p‐conducting NiO or ZnCo<jats:sub>2</jats:sub>O<jats:sub>4</jats:sub> are realized. In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> is grown at 600 °C and the amorphous p‐type oxides at room temperature by pulsed‐laser deposition. Highest rectification of about four orders of magnitude is observed for structures with Mg‐doped In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> layers having lower carrier density than undoped layers. The p‐ZnCo<jats:sub>2</jats:sub>O<jats:sub>4</jats:sub>/n‐In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> diodes do not show degradation at elevated temperatures of 150 °C, whereas the p‐NiO/n‐In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> diodes degrade irreversibly for <jats:italic>T</jats:italic> > 100 °C. Thermal admittance spectroscopy revealed shallow defect levels in the In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> layer with activation energy of about 12 and 250 meV, respectively.</jats:p>