Beschreibung:
<jats:title>Abstract</jats:title><jats:p>Organic permeable base transistors (OPBTs) are of great interest for flexible electronic circuits, as they offer very large on‐current density and a record‐high transition frequency. They rely on a vertical device architecture with current transport through native pinholes in a central base electrode. This study investigates the impact of pinhole density and pinhole diameter on the DC device performance in OPBTs based on experimental data and TCAD simulation results. A pinhole density of <jats:italic>N</jats:italic><jats:sub>Pin</jats:sub> = 54 µm<jats:sup>−2</jats:sup> and pinhole diameters around <jats:italic>L</jats:italic><jats:sub>Pin</jats:sub> = 15 nm are found in the devices. Simulations show that a variation of pinhole diameter and density around these numbers has only a minor impact on the DC device characteristics. A variation of the pinhole diameter and density by up to 100% lead to a deviation of less than 4% in threshold voltage, on/off current ratio, and sub‐threshold slope. Hence, the fabrication of OPBTs with reliable device characteristics is possible regardless of statistical deviations in thin film formation.</jats:p>