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Orhan, Elif; Anter, Aslıhan; Ulusoy, Murat; Polat, Barış; Okuyucu, Can; Yıldız, Mustafa; Altındal, Şemsettin

Effect of Gadolinium on Electrical Properties of Polyethyleneimine Functionalized and Nitrogen‐Doped Graphene Quantum Dot Nanocomposite Based Diode

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  • Medientyp: E-Artikel
  • Titel: Effect of Gadolinium on Electrical Properties of Polyethyleneimine Functionalized and Nitrogen‐Doped Graphene Quantum Dot Nanocomposite Based Diode
  • Beteiligte: Orhan, Elif; Anter, Aslıhan; Ulusoy, Murat; Polat, Barış; Okuyucu, Can; Yıldız, Mustafa; Altındal, Şemsettin
  • Erschienen: Wiley, 2023
  • Erschienen in: Advanced Electronic Materials
  • Sprache: Englisch
  • DOI: 10.1002/aelm.202300261
  • ISSN: 2199-160X
  • Schlagwörter: Electronic, Optical and Magnetic Materials
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: <jats:title>Abstract</jats:title><jats:p>Carbon, especially graphene quantum dots (GQDs) based electronics have become an attractive technology in recent years. The controlled modification of the electrical and optoelectronic properties of GQDs by physical/chemical processes or synthetic methods may lead to new applications. Gadolinium‐doped polyethyleneimine (PEI) functionalized and nitrogen‐doped graphene quantum dots (GdNPs‐PEI@N‐GQDs) are synthesized by a hydrothermal method to determine how doping carbon‐based materials with Gd alters the electrical properties of the structure. The electrical properties of the GdNPs/PEI@N‐GQDs nanocomposite‐based diode are investigated using the current–voltage (<jats:italic>I–</jats:italic><jats:italic>V</jats:italic>) technique and the capacitance and conductance voltage (<jats:italic>C–</jats:italic><jats:italic>V</jats:italic> &amp; <jats:italic>G</jats:italic>/<jats:italic>ω–</jats:italic><jats:italic>V</jats:italic>) technique at 300 K in the frequency range of 0.5 to 500 kHz at ± 5 V. The rectification ratio (RR) is found to be 14 at a voltage of ±5 V. The rectifying behavior of the diode changes to an ohmic behavior after doping with Gd, compared to the Gd‐free PEI@N‐GQDs sample (2.8 × 10<jats:sup>4</jats:sup> at ±5 V). The results are expected to have an impact on the understanding of carbon‐based electronics technology.</jats:p>
  • Zugangsstatus: Freier Zugang