Beschreibung:
<jats:title>Abstract</jats:title><jats:p>The initial stages of growth of GaAs–InGaAsP<jats:sub>var</jats:sub>–In<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>As heterostructures (<jats:italic>x</jats:italic> = 0.1 and 0.17) were investigated for the equilibrium‐cooling method of LPE growth. Similar investigations were carried out for GaAs–InGaAsP<jats:sub>var</jats:sub>–In<jats:sub>0.05</jats:sub>Ga<jats:sub>0.95</jats:sub>As heterocompositions, but for the step‐cooling technique.</jats:p><jats:p>The scheme of growing of In<jats:sub>0.17</jats:sub>Ga<jats:sub>0.83</jats:sub>As films of GaAs substrates with several intermediate buffler InGaAsP<jats:sub>var</jats:sub> layers is represented. These heterostructures were shown to have less than 10<jats:sup>6</jats:sup> cm<jats:sup>−2</jats:sup> dislocation density on the overall area of the film (> 2 cm<jats:sup>2</jats:sup>).</jats:p>