Dislocation etch‐pits revealed in submicron (100) GaAs epilayers by selective dissolution in the saturated GaSb melt

Medientyp: E-Artikel
Titel: Dislocation etch‐pits revealed in submicron (100) GaAs epilayers by selective dissolution in the saturated GaSb melt
Beteiligte: Bolkhovityanov, Yu. B.; Bolkhovityanova, R. I.; Trukhanov, E. M.
Erschienen: Wiley, 1985
Erschienen in: Crystal Research and Technology
Sprache: Englisch
DOI: 10.1002/crat.2170200408
ISSN: 0232-1300; 1521-4079
Schlagwörter: Condensed Matter Physics ; General Materials Science ; General Chemistry
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Beschreibung: <jats:title>Abstract</jats:title><jats:p>It has been showed that the saturated GaSb melt when contacting with a (100) GaAs substrate or a thin film selectively dissolves these solid phases. The dissolved thickness can be made so small as 500 Å and the revealed etch‐pits are corresponding to the entrances of dislocation lines on the examined surface.</jats:p>

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