• Medientyp: E-Artikel
  • Titel: Autodoping of epitaxial silicon layers (II) diffusion‐induced autodoping
  • Beteiligte: Kühne, H.; Gaworzewski, P.; Malze, W.
  • Erschienen: Wiley, 1985
  • Erschienen in: Crystal Research and Technology
  • Sprache: Englisch
  • DOI: 10.1002/crat.2170200507
  • ISSN: 0232-1300; 1521-4079
  • Schlagwörter: Condensed Matter Physics ; General Materials Science ; General Chemistry
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  • Beschreibung: <jats:title>Abstract</jats:title><jats:p>From discussing the influences of layer growth duration and deposition temperature on the slope of the steep autodoping profile branch adjacent to the substrate, it is concluded that there exists a special autodoping part, termed redistribution autodoping, which is independent on solid state diffusion effects, but should be restricted to the beginning of the layer growth.</jats:p>