Beschreibung:
<jats:title>Abstract</jats:title><jats:p>The gate surfaces of ion‐sensitive field‐effect transistor (ISFET) devices were functionalized with the π‐donor units, 6‐hydroxydopamine (<jats:bold>1</jats:bold>) or 4‐aminothiophenol (<jats:bold>2</jats:bold>). Concentration of trinitrotoluene, TNT, on the gate via π‐donor‐acceptor interactions yields charge‐transfer complexes that alter the gate potential. This enables the label‐free analysis of TNT with a detection limit corresponding to 1×10<jats:sup>−7</jats:sup> M.</jats:p>