Beschreibung:
<jats:title>Abstract</jats:title><jats:p>A flexible, 14.7 inch diagonal organic light emitting diode display has been successfully demonstrated. Device fabrication of the thin film transistor backplane occurred below 200 °C on a polyethylene naphthalate substrate using indium gallium zinc oxide with a saturation mobility of 13.5 cm<jats:sup>2</jats:sup>/V‐s as the active semiconductor.</jats:p>