A high‐efficiency class‐E power amplifier using SiC MESFET

Medientyp: E-Artikel
Titel: A high‐efficiency class‐E power amplifier using SiC MESFET
Beteiligte: Lee, Yong‐Sub; Jeong, Yoon‐Ha
Erschienen: Wiley, 2007
Erschienen in: Microwave and Optical Technology Letters, 49 (2007) 6, Seite 1447-1449
Sprache: Englisch
DOI: 10.1002/mop.22455
ISSN: 0895-2477; 1098-2760
Schlagwörter: Electrical and Electronic Engineering ; Condensed Matter Physics ; Atomic and Molecular Physics, and Optics ; Electronic, Optical and Magnetic Materials
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Beschreibung: AbstractThis article reports a high efficiency class‐E power amplifier using a SiC MESFET, which is designed and tested at 2.14 GHz. To improve output power and efficiency by suppressing harmonic powers, an output matching circuit using the transmission lines is used. From measured results for a single tone, the harmonic power levels are maintained below −58 dBc at a whole output power level. The peak power‐added efficiency of 72.3% with a power gain of 10.27 dB is achieved at an output power of 40.27 dBm. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1447–1449, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI.10.1002/mop.22455

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