Linearity‐optimized class‐E Doherty amplifier based on GaN HEMT

Medientyp: E-Artikel
Titel: Linearity‐optimized class‐E Doherty amplifier based on GaN HEMT
Beteiligte: Lee, Yong‐Sub; Lee, Mun‐Woo; Jeong, Yoon‐Ha
Erschienen: Wiley, 2009
Erschienen in: Microwave and Optical Technology Letters
Sprache: Englisch
DOI: 10.1002/mop.24154
ISSN: 0895-2477; 1098-2760
Schlagwörter: Electrical and Electronic Engineering ; Condensed Matter Physics ; Atomic and Molecular Physics, and Optics ; Electronic, Optical and Magnetic Materials
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Beschreibung: <jats:title>Abstract</jats:title><jats:p>In this article, we report the linearity improvement of the GaN HEMT class‐E Doherty power amplifier (CEDA). For the linearity improvement, not only the gate biases but also the matching circuits of the carrier and peaking cells are optimally controlled at a pout of 38 dBm, which is a 7‐dB back‐off power. For a two‐tone signal with 1‐MHz tone spacing, the IMD3 of‐58 dBc is achieved with a power‐added efficiency (PAE) of 45.4%. For a one‐carrier WCDMA signal, the PAE of 46.7% is obtained with an ACLR of‐32.9 dBc. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 763–766, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24154</jats:p>

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