> Merkliste Sie können Bookmarks mittels Listen verwalten, loggen Sie sich dafür bitte in Ihr SLUB Benutzerkonto ein.
Medientyp: E-Artikel Titel: Optimum design of highly linear and efficient GaN HEMT Doherty amplifier considering the soft turn‐on effects Beteiligte: Lee, Yong‐Sub; Lee, Mun‐Woo; Jeong, Yoon‐Ha Erschienen: Wiley, 2009 Erschienen in: Microwave and Optical Technology Letters Sprache: Englisch DOI: 10.1002/mop.24210 ISSN: 0895-2477; 1098-2760 Schlagwörter: Electrical and Electronic Engineering ; Condensed Matter Physics ; Atomic and Molecular Physics, and Optics ; Electronic, Optical and Magnetic Materials Entstehung: Anmerkungen: Beschreibung: <jats:title>Abstract</jats:title><jats:p>In this article, we propose the optimum design of a highly linear and efficient Doherty power amplifier (DPA) considering the soft turn‐on effects of the GaN HEMT. To compensate for the soft turn‐on characteristic and obtain an extended high‐efficiency range, the DPA is designed with unequal drain biases. For experimental validations, the carrier and peaking cells are designed and implemented with the drain bias of 23 V and 33 V, respectively, using 25‐W GaN HEMTs at 2.6 GHz and then tested using a continuous wave and a one‐carrier WCDMA signal. The measured results show the superior performance for the proposed GaN HEMT DPA. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 956–959, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24210</jats:p>