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Medientyp: E-Artikel Titel: A 77‐GHz PA with ground‐plane parasitic cancellation in a SiGe HBT BiCMOS technology Beteiligte: Giammello, Vittorio; Ragonese, Egidio; Palmisano, Giuseppe Erschienen: Wiley, 2011 Erschienen in: Microwave and Optical Technology Letters Sprache: Englisch DOI: 10.1002/mop.25972 ISSN: 0895-2477; 1098-2760 Schlagwörter: Electrical and Electronic Engineering ; Condensed Matter Physics ; Atomic and Molecular Physics, and Optics ; Electronic, Optical and Magnetic Materials Entstehung: Anmerkungen: Beschreibung: <jats:title>Abstract</jats:title><jats:p>This letter presents a 77‐GHz power amplifier implemented in a SiGe BiCMOS technology featuring bipolar transistors with 160/175‐GHz <jats:italic>f</jats:italic><jats:sub>T</jats:sub>/<jats:italic>f</jats:italic><jats:sub>max</jats:sub>. The circuit adopts a two stage differential topology with integrated input/output matching networks. The amplifier performance is considerably improved thanks to proper input/output LC resonant networks, which cancel out the ground‐plane parasitic effect. Matching networks use stacked transformers for impedance matching, differential‐to‐single‐ended conversion, and electro‐static discharge protection. The circuit achieves a power gain of 18.5 dB, a maximum output power of 11.6 dBm, with 4.2% power‐added efficiency, and an output 1‐dB compression point of 9.3 dBm. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1413–1416, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25972</jats:p>