Erschienen in:
Microwave and Optical Technology Letters, 60 (2018) 2, Seite 400-405
Sprache:
Englisch
DOI:
10.1002/mop.30975
ISSN:
1098-2760;
0895-2477
Entstehung:
Anmerkungen:
Beschreibung:
AbstractA 3‐10 GHz stacked power amplifier (PA) with low group delay variation and 18.1 dBm peak 1 dB compression output power (P1dB) in 65 nm CMOS bulk technology is presented. It is intended for ultra‐wideband or multiband telecommunication, sensing, and instrumentation systems operating in the 3‐10 GHz frequency range situated in the S, C, and X bands. Its design, based on stacked transistors allowing a supply voltage as high as 4 V to achieve a high 1 dB compression output power, is detailed. In the 3–10 GHz band, the proposed PA provides measured gain, P1dB, and maximum power added efficiency (PAEmax) of 12.65 ± 1.25 dB, 16 ± 2.1 dBm, and 20.15 ± 7.55%, respectively. In addition, in its frequency range of operation, this PA achieves an excellent measured group delay variation of ±21.55 ps. To the authors’ knowledge, this wideband PA offers the lowest group delay variation in this frequency range of operation.