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Engelhart, Peter; Hermann, Sonja; Neubert, Tobias; Plagwitz, Heiko; Grischke, Rainer; Meyer, Rüdiger; Klug, Ulrich; Schoonderbeek, Aart; Stute, Uwe; Brendel, Rolf

Laser ablation of SiO2 for locally contacted Si solar cells with ultra‐short pulses

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  • Medientyp: E-Artikel
  • Titel: Laser ablation of SiO2 for locally contacted Si solar cells with ultra‐short pulses
  • Beteiligte: Engelhart, Peter; Hermann, Sonja; Neubert, Tobias; Plagwitz, Heiko; Grischke, Rainer; Meyer, Rüdiger; Klug, Ulrich; Schoonderbeek, Aart; Stute, Uwe; Brendel, Rolf
  • Erschienen: Wiley, 2007
  • Erschienen in: Progress in Photovoltaics: Research and Applications, 15 (2007) 6, Seite 521-527
  • Sprache: Englisch
  • DOI: 10.1002/pip.758
  • ISSN: 1062-7995; 1099-159X
  • Schlagwörter: Electrical and Electronic Engineering ; Condensed Matter Physics ; Renewable Energy, Sustainability and the Environment ; Electronic, Optical and Magnetic Materials
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  • Beschreibung: <jats:title>Abstract</jats:title><jats:p>We apply ultra‐short pulse laser ablation to create local contact openings in thermally grown passivating SiO<jats:sub>2</jats:sub> layers. This technique can be used for locally contacting oxide passivated Si solar cells. We use an industrially feasible laser with a pulse duration of τ<jats:sub>pulse</jats:sub> ∼ 10 ps. The specific contact resistance that we reach with evaporated aluminium on a 100 Ω/sq and P‐diffused emitter is in the range of 0·3–1 mΩ cm<jats:sup>2</jats:sup>. Ultra‐short pulse laser ablation is sufficiently damage free to abandon wet chemical etching after ablation. We measure an emitter saturation current density of <jats:italic>J</jats:italic><jats:sub>0e</jats:sub> = (6·2 ± 1·6) × 10<jats:sup>−13</jats:sup> A/cm<jats:sup>2</jats:sup> on the laser‐treated areas after a selective emitter diffusion with <jats:italic>R</jats:italic><jats:sub>sheet</jats:sub> ∼ 20 Ω/sq into the ablated area; a value that is as low as that of reference samples that have the SiO<jats:sub>2</jats:sub> layer removed by HF‐etching. Thus, laser ablation of dielectrics with pulse durations of about 10 ps is well suited to fabricate high‐efficiency Si solar cells. Copyright © 2007 John Wiley &amp; Sons, Ltd.</jats:p>