Beschreibung:
<jats:title>Abstract</jats:title><jats:p>The valence electronic structure of the hydrogen adsorbed ZnO(<jats:styled-content>$10\overline {\rm 1} 0$<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/tex2gif-ueqn-2.gif" xlink:title="equation image" /></jats:styled-content>) surface has been investigated by angle‐resolved photoelectron spectroscopy utilizing synchrotron radiation. Adsorption of H on ZnO(<jats:styled-content>$10\overline {\rm 1} 0$<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/tex2gif-ueqn-3.gif" xlink:title="equation image" /></jats:styled-content>) at room temperature induces a state with a faint photoemission intensity at around the Fermi level. The H‐induced state forms a band with a parabolic dispersion at around the center of the surface Brillouin zone (SBZ). The band has the same energy dispersion relation along two high symmetry axes of the SBZ (<jats:styled-content>$\overline {\Gamma {\rm X'}}$<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/tex2gif-ueqn-4.gif" xlink:title="equation image" /></jats:styled-content> and <jats:styled-content>$\overline {\Gamma {\rm X}}$<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/tex2gif-ueqn-5.gif" xlink:title="equation image" /></jats:styled-content>), <jats:italic>i.e.</jats:italic> the isotropic two‐dimensional electronic structure is realized. We propose the mechanism of H‐adsorption‐induced metallization of the ZnO(<jats:styled-content>$10\overline {\rm 1} 0$<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/tex2gif-ueqn-6.gif" xlink:title="equation image" /></jats:styled-content>) to be a partial filling of the Zn 4s conduction band as a result of H‐induced downward band bending.</jats:p>