Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures

Medientyp: E-Artikel
Titel: Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures
Beteiligte: Schmult, Stefan; Wirth, Steffen; Solovyev, Victor V.; Hentschel, Rico; Wachowiak, Andre; Scheinert, Tobias; Großer, Andreas; Kukushkin, Igor V.; Mikolajick, Thomas
Erschienen: Wiley, 2020
Erschienen in: physica status solidi (a)
Sprache: Englisch
DOI: 10.1002/pssa.201900732
ISSN: 1862-6300; 1862-6319
Schlagwörter: Materials Chemistry ; Electrical and Electronic Engineering ; Surfaces, Coatings and Films ; Surfaces and Interfaces ; Condensed Matter Physics ; Electronic, Optical and Magnetic Materials
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Beschreibung: <jats:sec><jats:label /><jats:p>The presence of a 2D electron gas (2DEG) in GaN/Al<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1–<jats:italic>x</jats:italic></jats:sub>N heterostructures with low aluminum mole fraction is found to depend on the residual background impurity concentration in the GaN/AlGaN layer stack. At a residual donor level of 2 × 10<jats:sup>16</jats:sup> cm<jats:sup>−3</jats:sup>, a 2DEG is absent at 300 K in dark environment. Such a 2DEG can be generated at the GaN/AlGaN interface either by illumination with ultraviolet light or by applying an electrostatic potential. The latter results in inherently normally‐off switching characteristics of lateral field‐effect transistors.</jats:p></jats:sec>

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