Beschreibung:
Cd1−2xAg2xSe films (as 0% ≤ x ≤ 5%, at%) are synthesized by chemistry method for fabricating anodes in optoelectronic devices. Further, the structural, optical, and electrical properties of the ternary film are extensively investigated. The structural properties of the Cd1−2xAg2xSe anodes are characterized using X‐ray diffraction (XRD) which confirms the cubic structure in the anodes. The optical properties of the thin films are recorded by UV–vis with an effect of metal dopants. Those results are incorporated with Tauc correlation to determine the optical parameters, valence band and conduction band positions, steepness parameter, and electron–phonon interaction in the samples. In addition, the electrical characteristics of thin films are analyzed using their photocurrent density curves, and the characteristic resistances in the optoelectronic devices are determined using the electrochemical impedance spectrum.