Band‐edge photoluminescence in CdTe

Medientyp: E-Artikel
Titel: Band‐edge photoluminescence in CdTe
Beteiligte: Horodyský, P.; Grill, R.; Hlídek, P.
Erschienen: Wiley, 2006
Erschienen in: physica status solidi (b)
Sprache: Englisch
DOI: 10.1002/pssb.200642272
ISSN: 0370-1972; 1521-3951
Schlagwörter: Condensed Matter Physics ; Electronic, Optical and Magnetic Materials
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Beschreibung: <jats:title>Abstract</jats:title><jats:p>Near band‐gap photoluminescence (PL) and absorption of bulk crystals of CdTe were measured over a wide range of temperatures (4–500 K). It is demonstrated that the high‐temperature (above 150 K) PL intensity correlates with a lower quality of the samples and quasiparticle localization induced by the crystal potential fluctuations. The influence of the high absorption coefficient at the free‐exciton resonance energy on the PL spectra is analytically studied by solving the diffusion‐recombination equation. We show that the reabsorption of the radiation by the free‐exciton states creates two illusory PL maxima. No dead surface layer is needed to explain reabsorption effects. The room‐temperature PL maximum matches neither the free‐exciton resonance nor the band‐gap energy. The high temperature PL is explained by the recombination of electrons and holes localized on potential fluctuations. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>

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