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Medientyp:
E-Artikel
Titel:
Nitrogen incorporation in SnO2 thin films grown by chemical vapor deposition
Beteiligte:
Jiang, Jie;
Lu, Yinmei;
Kramm, Benedikt;
Michel, Fabian;
Reindl, Christian T.;
Kracht, Max E.;
Klar, Peter J.;
Meyer, Bruno K.;
Eickhoff, Martin
Erschienen:
Wiley, 2016
Erschienen in:
physica status solidi (b), 253 (2016) 6, Seite 1087-1092
Sprache:
Englisch
DOI:
10.1002/pssb.201552747
ISSN:
0370-1972;
1521-3951
Entstehung:
Anmerkungen:
Beschreibung:
The influence of nitrogen incorporation in high concentrations on the structural properties and morphology of SnO2–xNx thin films grown by chemical vapor deposition is studied. A decrease in crystallite size and a lattice expansion in SnO2–xNx films with increasing x are found by X‐ray diffraction analysis and Raman spectroscopy. Substitutional nitrogen with a binding energy of 397.15 eV was detected by X‐ray photoelectron spectroscopy, attributed to the N3− ion in the SnN bond. The increase of the N atomic concentration x in SnO2–xNx films from 0 to 7.9 at.% without phase separation with increasing NH3 flow rate during the deposition is accompanied by a decrease of O atomic concentration.