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Medientyp:
E-Artikel
Titel:
Oxide‐Based Optoelectronics
Beteiligte:
Demkov, Alexander A.;
Ortmann, J. Elliott;
Reynaud, Marc;
Hamze, Ali K.;
Ponath, Patrick;
Li, Wente
Erschienen:
Wiley, 2021
Erschienen in:
physica status solidi (b), 258 (2021) 9
Sprache:
Englisch
DOI:
10.1002/pssb.202000497
ISSN:
1521-3951;
0370-1972
Entstehung:
Anmerkungen:
Beschreibung:
<jats:sec><jats:label /><jats:p>Integrated Si photonics has the potential to revolutionize the processing of information between different integrated chips, as well as within a single chip itself. By performing at least a part of the task with photons rather than electrons, new opportunities for broad‐band low‐power communication and computing are created. Herein, the theoretical description of the linear electro‐optic (EO), or Pockels, effect and a newly elucidated design rule for materials evaluation is summarized. Possible applications of Si‐integrated optical elements based on perovskite oxides and their heterostructures are also discussed. In particular, the Pockels effect in BaTiO<jats:sub>3</jats:sub> films grown on Si and intersubband transitions in Si‐integrated perovskite quantum wells (QWs) is described.</jats:p></jats:sec>