Beschreibung:
AbstractThe phenomena of birefringence and plasma frequency splitting in semiconductors with isotropic non‐parabolic dispersion law of carrier energy in the presence of a dc electric field have been considered on the basis of expressions obtained in a previous work [l]. n‐InSb is taken as an example for the numerical calculations. It is shown that the phase shift due to the birefringence can attain a considerable value. The effect can, in principle, be used for creation of modulators, shutters, and circulators of electromagnetic radiation in the infrared range.