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Medientyp:
E-Artikel
Titel:
A Modified Local Density Approximation. Electron Density in Inversion Layers
Beteiligte:
Paasch, G.;
Übensee, H.
Erschienen:
Wiley, 1982
Erschienen in:physica status solidi (b)
Sprache:
Englisch
DOI:
10.1002/pssb.2221130116
ISSN:
0370-1972;
1521-3951
Entstehung:
Anmerkungen:
Beschreibung:
<jats:title>Abstract</jats:title><jats:p>In the local density approximation (LDA) the density of a many‐electron system is expressed as a function of the spatially varying potential. Here a modified LDA is derived applicable for a potential with a high step at some plane which is e.g. a model for the band edges in an inversion layer at the semiconductor—insulator interface. The local density of states shows oscillations and decreases to zero at the interface as a consequence of quantum mechanical reflection. Simple expressions for the density are obtained for the strongly degenerate and for the non‐degenerate system. The comparison with exact results for a model system (triangular potential) shows that the modified LDA yields good results for a wide range of parameters corresponding to real inversion layers.</jats:p>