Beschreibung:
<jats:title>Abstract</jats:title><jats:p>Simplest structural models are considered which take account of an intermediate order in both, homopolar and heteropolar, amorphous semiconductors. These models are used to study the influence of an intermediate order on the nature of an intrinsic random field in the material, hence, on the frequency dependence of the light absorption coefficient in the optical tail region.</jats:p>