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Medientyp: E-Artikel Titel: High quantum efficiency of semipolar GaInN/GaN quantum wells Beteiligte: Feneberg, Martin; Lipski, Frank; Schirra, Martin; Sauer, Rolf; Thonke, Klaus; Wunderer, Thomas; Brückner, Peter; Scholz, Ferdinand Erschienen: Wiley, 2008 Erschienen in: physica status solidi c Sprache: Englisch DOI: 10.1002/pssc.200778445 ISSN: 1862-6351; 1610-1642 Schlagwörter: Condensed Matter Physics Entstehung: Anmerkungen: Beschreibung: <jats:title>Abstract</jats:title><jats:p>The development of efficient GaInN/GaN based light emitting devices is hampered by built‐in electric fields. These fields, arising from piezoelectric and spontaneous polarization, separate electron and hole wavefunctions and reduce their spatial overlap. Therefore, the internal quantum efficiency is drastically reduced in the presence of built‐in fields.</jats:p><jats:p>To decrease the detrimental influence of the polarization fields on quantum efficiency, growth on non‐ or semipolar crystal facets is conducted. We investigate samples containing quantum wells grown on the {1<jats:styled-content>$\bar 1$<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/tex2gif-ueqn-1.gif" xlink:title="equation image" /></jats:styled-content>01} facet (tilt angle from (0001) is <jats:italic>θ</jats:italic> = 62°) of selectively grown GaN stripes and compare them to samples grown on the commonly used c plane. We experimentally determine direction and strength of built‐in polarization fields. These fields are used to compute overlap integrals and to estimate the internal quantum efficiency of semipolar quantum wells in comparison to polar and nonpolar ones. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>