> Detailanzeige

Vescan, Andrei; Hardtdegen, Hilde; Ketteniß, Nico; Eickelkamp, Martin; Noculak, Achim; Goliasch, Jens; Ahe, Martina v. d.; Bay, Helge Lago; Schäpers, Thomas; Kalisch, Holger; Grützmacher, Detlev; Jansen, Rolf H.

Study on growth and electrical performance of double‐heterostructure AlGaN/GaN/AlGaN field‐effect‐transistors

Literatur-
verwaltung

Zur
Merkliste

Lösche von
Merkliste

Per Whatsapp teilen

Schließen

Merkliste



Sie können Bookmarks mittels Listen verwalten, loggen Sie sich dafür bitte in Ihr SLUB Benutzerkonto ein.
  • Medientyp: E-Artikel
  • Titel: Study on growth and electrical performance of double‐heterostructure AlGaN/GaN/AlGaN field‐effect‐transistors
  • Beteiligte: Vescan, Andrei; Hardtdegen, Hilde; Ketteniß, Nico; Eickelkamp, Martin; Noculak, Achim; Goliasch, Jens; Ahe, Martina v. d.; Bay, Helge Lago; Schäpers, Thomas; Kalisch, Holger; Grützmacher, Detlev; Jansen, Rolf H.
  • Erschienen: Wiley, 2009
  • Erschienen in: physica status solidi c
  • Sprache: Englisch
  • DOI: 10.1002/pssc.200880855
  • ISSN: 1862-6351; 1610-1642
  • Schlagwörter: Condensed Matter Physics
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: <jats:title>Abstract</jats:title><jats:p>Device simulations and first experimental results on double‐heterostructure (DH) AlGaN/GaN/AlGaN field effect transistors are presented. Simulations show that above an Al content of approximately 10% in the back GaN/AlGaN barrier, a hole channel could be formed. On the other hand the DH is shown to reduce the electric field in the regions adjacent to the channel and to suppress trapping. First experimental results confirm the existence of the 2‐dimensional electron gas for a back barrier Al content of 5%. The device performance although strongly limited by the material quality, is comparable to that of conventional structures, promising significant potential once design and material issues are resolved. (© 2009 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</jats:p>