Sublimation growth of bulk crystals of AlN‐rich (AlN)x(SiC)1–x solid solutions

Medientyp: E-Artikel
Titel: Sublimation growth of bulk crystals of AlN‐rich (AlN)x(SiC)1–x solid solutions
Beteiligte: Bickermann, Matthias; Filip, Octavian; Epelbaum, Boris M.; Heimann, Paul; Winnacker, Albrecht
Erschienen: Wiley, 2010
Erschienen in: physica status solidi c
Sprache: Englisch
DOI: 10.1002/pssc.200983423
ISSN: 1862-6351; 1610-1642
Schlagwörter: Condensed Matter Physics
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Beschreibung: <jats:title>Abstract</jats:title><jats:p>(AlN)<jats:sub>x</jats:sub>(SiC)<jats:sub>1–x</jats:sub> bulk single crystals are prepared by sublimation growth employing an AlN source placed in a tantalum carbide container. A <jats:italic>6H</jats:italic> ‐SiC substrate acts both as seed and as source for silicon and carbon species. As the growth temperature is increased from 1900°C to 2050°C or the seed surface orientation is changed from (01<jats:styled-content>1</jats:styled-content>5) to (0001), crystal coloration changes from yellowish to greenish to blackish. We attribute the change in coloration to an increasing Si/C content in the samples and estimate that up to 10% at of Si and C are incorporated. Accompanying changes in below band‐gap optical absorption and cathodoluminescence are discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>

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