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Savchenko, Elena; Khyzhniy, Ivan; Uyutnov, Sergey; Barabashov, Andrey; Gumenchuk, Galina; Ponomaryov, Alexey; Bondybey, Vladimir

Charged defects and defect‐induced processes in nitrogen films

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  • Medientyp: E-Artikel
  • Titel: Charged defects and defect‐induced processes in nitrogen films
  • Beteiligte: Savchenko, Elena; Khyzhniy, Ivan; Uyutnov, Sergey; Barabashov, Andrey; Gumenchuk, Galina; Ponomaryov, Alexey; Bondybey, Vladimir
  • Erschienen: Wiley, 2015
  • Erschienen in: physica status solidi c
  • Sprache: Englisch
  • DOI: 10.1002/pssc.201400166
  • ISSN: 1862-6351; 1610-1642
  • Schlagwörter: Condensed Matter Physics
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: <jats:title>Abstract</jats:title><jats:p>Radiation effects in solid nitrogen irradiated with an electron beam were studied with emphasis on the role of charged centers in radiation‐induced phenomena. The experiments were performed employing luminescence method and activation spectroscopy techniques – spectrally resolved thermally stimulated luminescence TSL and thermally stimulated exoelectron emission. Samples were probed in depth by varying electron energy, thus discriminating radiation‐induced processes in the bulk and at the surface. Spectroscopic evidence of the excited N<jats:sub>2</jats:sub><jats:sup>*</jats:sup> (C<jats:sup>3</jats:sup>Π<jats:sub>u</jats:sub>) molecule desorption was obtained for the first time and mechanism of the phenomenon based on recombination of electron with intrinsic charged center N<jats:sub>4</jats:sub><jats:sup>+</jats:sup> was proposed. The key role of N<jats:sub>3</jats:sub><jats:sup>+</jats:sup> center dissociative recombination in generation of N radicals is suggested. (© 2015 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</jats:p>