Beschreibung:
AbstractIn this paper, we report efficiency enhancement of indium phosphide (InP) quantum dot‐based light‐emitting diodes (QD‐LEDs) using polyethylenimine (PEI) surface modifier. Adapting solution processed PEI layer on top of the aluminum‐doped zinc oxide (Al:ZnO) nanoparticle (NP) layer, the leakage current of inverted device was suppressed and electron injection into conduction band of InP/ZnSe/ZnS QDs also facilitated by interfacial dipoles of thin PEI layer. As a results, the current efficiency was dramatically increased from 0.07 cd/A to 2.84 cd/A.