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Haase, Felix; Hollemann, Christina; Wehmeier, Nadine; Bothe, Karsten; Min, Byungsul; Schulte-Huxel, Henning; Brendel, Rolf; Peibst, Robby

Design of Large Poly‐Si on Oxide Interdigitated Back Contact (POLO IBC) Silicon Solar Cells with Local Al–p+ Contacts in the Constraints of Measurement and Module Integration

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  • Medientyp: E-Artikel
  • Titel: Design of Large Poly‐Si on Oxide Interdigitated Back Contact (POLO IBC) Silicon Solar Cells with Local Al–p+ Contacts in the Constraints of Measurement and Module Integration
  • Beteiligte: Haase, Felix; Hollemann, Christina; Wehmeier, Nadine; Bothe, Karsten; Min, Byungsul; Schulte-Huxel, Henning; Brendel, Rolf; Peibst, Robby
  • Erschienen: Wiley, 2022
  • Erschienen in: Solar RRL
  • Sprache: Englisch
  • DOI: 10.1002/solr.202200583
  • ISSN: 2367-198X
  • Schlagwörter: Electrical and Electronic Engineering ; Energy Engineering and Power Technology ; Atomic and Molecular Physics, and Optics ; Electronic, Optical and Magnetic Materials
  • Entstehung:
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  • Beschreibung: <jats:sec><jats:label /><jats:p>Interdigitated back contact (IBC) silicon solar cells with a passivating n‐type poly‐Si on oxide emitter and an aluminum‐doped p<jats:sup>+</jats:sup> base contact on M2‐sized Ga‐doped p‐type Cz wafers are reported. The Al‐doped base contact forms during the firing of the printed contacts and allows for a lean process flow. The device optimization balances recombination at the base contacts against resistive losses and respects constraints set by the need of interconnecting cells in a module and contacting the cells temporally by a measurement chuck. A special sample holder is designed for measuring the <jats:italic>I</jats:italic><jats:sub>sc</jats:sub><jats:italic>–V</jats:italic><jats:sub>oc</jats:sub> curve of the IBC cell with a busbar‐less metal grid. The pseudo‐efficiency is 24.7%. All fingers of each polarity are connected with wires and an efficiency of 22.3% is measured. The comparison of simulations and measurements reveals that the cell has 23.4% efficiency without the series resistance losses due to the wires. A huge part of the resistive losses in the cell are the transport losses of the majorities in the base dissipating a power that corresponds to 0.76%<jats:sub>abs</jats:sub> efficiency and the resistive losses at the Al‐doped base contact (0.29%<jats:sub>abs</jats:sub>).</jats:p></jats:sec>