Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology

Medientyp: E-Artikel
Titel: Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology
Beteiligte: Antonova, I.V.; Popov, V.P.; Stas, V.F.; Gutakovskii, A.K.; Plotnikov, A.E.; Obodnikov, V.I.
Erschienen: Elsevier BV, 1999
Erschienen in: Microelectronic Engineering
Sprache: Englisch
DOI: 10.1016/s0167-9317(99)00411-6
ISSN: 0167-9317
Schlagwörter: Electrical and Electronic Engineering ; Surfaces, Coatings and Films ; Condensed Matter Physics ; Atomic and Molecular Physics, and Optics ; Electronic, Optical and Magnetic Materials
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