• Medientyp: E-Artikel
  • Titel: Atomic-level polarization reversal in sliding ferroelectric semiconductors
  • Beteiligte: Sui, Fengrui; Li, Haoyang; Qi, Ruijuan; Jin, Min; Lv, Zhiwei; Wu, Menghao; Liu, Xuechao; Zheng, Yufan; Liu, Beituo; Ge, Rui; Wu, Yu-Ning; Huang, Rong; Yue, Fangyu; Chu, Junhao; Duan, Chungang
  • Erschienen: Springer Science and Business Media LLC, 2024
  • Erschienen in: Nature Communications, 15 (2024) 1
  • Sprache: Englisch
  • DOI: 10.1038/s41467-024-48218-z
  • ISSN: 2041-1723
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: AbstractIntriguing “slidetronics” has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spatially track the interlayer sliding dynamics at atomic-level remain elusive. Here, we address the decisive challenge to in-situ trace the atomic-level interlayer sliding and the induced polarization reversal in vdW-layered yttrium-doped γ-InSe, step by step and atom by atom. We directly observe the real-time interlayer sliding by a 1/3-unit cell along the armchair direction, corresponding to vertical polarization reversal. The sliding driven only by low energetic electron-beam illumination suggests rather low switching barriers. Additionally, we propose a new sliding mechanism that supports the observed reversal pathway, i.e., two bilayer units slide towards each other simultaneously. Our insights into the polarization reversal via the atomic-scale interlayer sliding provide a momentous initial progress for the ongoing and future research on sliding ferroelectrics towards non-volatile storages or ferroelectric field-effect transistors.
  • Zugangsstatus: Freier Zugang