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Medientyp:
E-Artikel
Titel:
High-mobility junction field-effect transistor via graphene/MoS2 heterointerface
Beteiligte:
Kim, Taesoo;
Fan, Sidi;
Lee, Sanghyub;
Joo, Min-Kyu;
Lee, Young Hee
Erschienen:
Springer Science and Business Media LLC, 2020
Erschienen in:
Scientific Reports, 10 (2020) 1
Sprache:
Englisch
DOI:
10.1038/s41598-020-70038-6
ISSN:
2045-2322
Entstehung:
Anmerkungen:
Beschreibung:
<jats:title>Abstract</jats:title><jats:p>Monolayer molybdenum disulfide (MoS<jats:sub>2</jats:sub>) possesses a desirable direct bandgap with moderate carrier mobility, whereas graphene (Gr) exhibits a zero bandgap and excellent carrier mobility. Numerous approaches have been suggested for concomitantly realizing high on/off current ratio and high carrier mobility in field-effect transistors, but little is known to date about the effect of two-dimensional layered materials. Herein, we propose a Gr/MoS<jats:sub>2</jats:sub> heterojunction platform, i.e., junction field-effect transistor (JFET), that enhances the carrier mobility by a factor of ~ 10 (~ 100 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>) compared to that of monolayer MoS<jats:sub>2</jats:sub>, while retaining a high on/off current ratio of ~ 10<jats:sup>8</jats:sup> at room temperature. The Fermi level of Gr can be tuned by the wide back-gate bias (<jats:italic>V</jats:italic><jats:sub>BG</jats:sub>) to modulate the effective Schottky barrier height (SBH) at the Gr/MoS<jats:sub>2</jats:sub> heterointerface from 528 meV (<jats:italic>n</jats:italic>-MoS<jats:sub>2</jats:sub>/<jats:italic>p</jats:italic>-Gr) to 116 meV (<jats:italic>n</jats:italic>-MoS<jats:sub>2</jats:sub>/<jats:italic>n</jats:italic>-Gr), consequently enhancing the carrier mobility. The double humps in the transconductance derivative profile clearly reveal the carrier transport mechanism of Gr/MoS<jats:sub>2</jats:sub>, where the barrier height is controlled by electrostatic doping.</jats:p>