Beschreibung:
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( Ba<jats:sub>0.5</jats:sub>Sr<jats:sub>0.5</jats:sub>)TiO<jats:sub>3</jats:sub> (BST) thin films have been prepared on Pt/SiO<jats:sub>2</jats:sub>/Si substrates under various Ar/O<jats:sub>2</jats:sub> plasma conditions by the conventional rf magnetron sputtering method using a ceramic target containing excess BaO and SrO. With increasing deposition temperature, the crystallinity of the BST films abruptly increased and change of the preferred orientation was observed. At 650° C, (100)-preferred orientation was obtained. The increase of the crystallinity of films improved the dielectric constant. A 100 nm BST thin film deposited at 650° C with 50% O<jats:sub>2</jats:sub> plasma content has a dielectric constant of 725 and a leakage current density of 2.3×10<jats:sup>-7</jats:sup> A/cm<jats:sup>2</jats:sup> at 2.5 V. In the current-voltage curve of BST film deposited at higher substrate temperature, lower leakage current density in the low bias region and narrower flat region (hopping conduction region) were obtained.
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