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Medientyp:
E-Artikel
Titel:
Temperature Dependence of the Phonons of Bulk AlN
Beteiligte:
M. Hayes, Jonathan;
Martin Kuball, Martin Kuball;
Ying Shi, Ying Shi;
James H. Edgar, James H. Edgar
Erschienen:
IOP Publishing, 2000
Erschienen in:
Japanese Journal of Applied Physics, 39 (2000) 7B, Seite L710
Sprache:
Nicht zu entscheiden
DOI:
10.1143/jjap.39.l710
ISSN:
1347-4065;
0021-4922
Entstehung:
Anmerkungen:
Beschreibung:
Micro-Raman scattering measurements were performed on bulk wurtzite AlN crystals over a temperature range from 10 K to 1275 K. The temperature dependence of the frequency of the AlN phonons follows an empirical relationship previously introduced for diamond. A temperature-induced frequency shift of the E2phonon of -(2.22±0.02)×10-2cm-1/K was determined for high temperatures, which is similar to values reported for bulk GaN. The results provide the basis for the non-invasive monitoring of the temperature of (Al,Ga)N by Raman scattering.