Erschienen in:
Japanese Journal of Applied Physics, 30 (1991) 12S, Seite 3876
Sprache:
Nicht zu entscheiden
DOI:
10.1143/jjap.30.3876
ISSN:
0021-4922;
1347-4065
Entstehung:
Anmerkungen:
Beschreibung:
Room-temperature cw operation of an InGaAs/InGaAsP multiple quantum well (MQW) laser diode on a Si substrate is reported. The MQW laser emits at 1.54-µm wavelength and exhibits no degradation after over 1,000 hours of operation. Employing a hybrid organometallic vapor-phase epitaxy/vapor mixing epitaxy method and a layer structure for improving crystalline quality, high-quality MQW were obtained. The stable longitudinal mode spectrum demonstrates the effectiveness of the MQW active layer and results in low-intensity noise. Annealing phenomena under cw operation are also discussed.