Beschreibung:
<jats:p>
A novel electron beam (EB) spot size measurement method is proposed. In this method, EB spot size is obtained from the relationship between the width of the trenches in the reference sample and the intensity profile of backscattered electrons. Selective chemical etching of a GaAlAs/GaAs superlattice produces an ideal structure for the reference sample. Such superlattice is fabricated by metalorganic chemical vapor deposition and trench widths are verified by transmission electron microscopy. Using 0.6 µm deep and 8.5-65 nm wide trenches, nanometer-level EB spot sizes can be accurately measured.
</jats:p>