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Yu, Jun; Wang, Hua; Zhao, Bairu; Wang, Yunbo; Guo, Dongyun; Gao, Junxiong; Zhou, Wenli; Xie, Jifan

Fabrication and Characterization of Metal/Ferroelectric/Semiconductor Field Effect Transistor with the Ag/Bi4Ti3O12/p-Si(100) Structure

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  • Medientyp: E-Artikel
  • Titel: Fabrication and Characterization of Metal/Ferroelectric/Semiconductor Field Effect Transistor with the Ag/Bi4Ti3O12/p-Si(100) Structure
  • Beteiligte: Yu, Jun; Wang, Hua; Zhao, Bairu; Wang, Yunbo; Guo, Dongyun; Gao, Junxiong; Zhou, Wenli; Xie, Jifan
  • Erschienen: IOP Publishing, 2004
  • Erschienen in: Japanese Journal of Applied Physics
  • Sprache: Nicht zu entscheiden
  • DOI: 10.1143/jjap.43.2435
  • ISSN: 0021-4922; 1347-4065
  • Schlagwörter: General Physics and Astronomy ; General Engineering
  • Entstehung:
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  • Beschreibung: <jats:p> Metal–ferroelectric–semiconductor field-effect-transistors (MFS-FETs) with the Ag/Bi<jats:sub>4</jats:sub>Ti<jats:sub>3</jats:sub>O<jats:sub>12</jats:sub>/p-Si (100) structures were fabricated. The <jats:italic>I</jats:italic> <jats:sub>ds</jats:sub>–<jats:italic>V</jats:italic> <jats:sub>g</jats:sub> hysteresis curve of the FET shows the counter-clockwise direction, which demonstrates the charge of channel conductivity due to the ferroelectric polarization of Bi<jats:sub>4</jats:sub>Ti<jats:sub>3</jats:sub>O<jats:sub>12</jats:sub> and the memory window with a gate voltage of ±6 V was 1.2 V. The current ratio of <jats:italic>I</jats:italic> <jats:sub>ds(on)</jats:sub> to <jats:italic>I</jats:italic> <jats:sub>ds(off)</jats:sub> was over two orders in magnitude at zero gate voltage which indicates the MFS-FET can be used in nondestructive readout (NDRO) applications. </jats:p>