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Medientyp:
E-Artikel
Titel:
Investigation of digital alloyed AlInSb metamorphic buffers
Beteiligte:
Dahiya, Vinita;
Deitz, Julia I.;
Hollingshead, David A.;
Carlin, John A.;
Grassman, Tyler J.;
Krishna, Sanjay
Erschienen:
American Vacuum Society, 2018
Erschienen in:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Sprache:
Englisch
DOI:
10.1116/1.5018260
ISSN:
2166-2746;
2166-2754
Entstehung:
Anmerkungen:
Beschreibung:
<jats:p>Al1-xInxSb metamorphic step-graded buffers with Al0.6In0.4Sb terminal layers, designed to serve as a virtual substrate to support integrated InAs0.5Sb0.5 long-wave infrared absorber layers, were grown on GaSb wafers via molecular beam epitaxy. Two different structural profiles were used to define the effective composition of each buffer step: one based on digital alloys (1 nm period, ∼1.6 unit cells) and the other based on short period superlattices (10 nm period, ∼16 unit cells). Characterization via optical Nomarski microscopy, x-ray diffraction reciprocal space mapping, and transmission electron microscopy indicates that the digital alloy based structure behaves similar to that expected for a conventional bulk ternary alloy based structure, while the short period superlattice structure exhibits significantly hindered relaxation within the buffer layers.</jats:p>