> Detailanzeige

Turpaud, Victor; Nguyen, Thi-Hao-Nhi; Dely, Hamza; Koompai, Natnicha; Bricout, Annabelle; Hartmann, Jean-Michel; Bernier, Nicolas; Krawczyk, Julia; Lima, Gabriel; Edmond, Samson; Herth, Etienne; Alonso-Ramos, Carlos; Vivien, Laurent; Marris-Morini, Delphine

Low-loss SiGe waveguides for mid-infrared photonics fabricated on 200 mm wafers

Literatur-
verwaltung

Zur
Merkliste

Lösche von
Merkliste

Per Whatsapp teilen

Schließen

Merkliste



Sie können Bookmarks mittels Listen verwalten, loggen Sie sich dafür bitte in Ihr SLUB Benutzerkonto ein.
  • Medientyp: E-Artikel
  • Titel: Low-loss SiGe waveguides for mid-infrared photonics fabricated on 200 mm wafers
  • Beteiligte: Turpaud, Victor; Nguyen, Thi-Hao-Nhi; Dely, Hamza; Koompai, Natnicha; Bricout, Annabelle; Hartmann, Jean-Michel; Bernier, Nicolas; Krawczyk, Julia; Lima, Gabriel; Edmond, Samson; Herth, Etienne; Alonso-Ramos, Carlos; Vivien, Laurent; Marris-Morini, Delphine
  • Erschienen: Optica Publishing Group, 2024
  • Erschienen in: Optics Express, 32 (2024) 10, Seite 17400
  • Sprache: Englisch
  • DOI: 10.1364/oe.521925
  • ISSN: 1094-4087
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: This article presents low-loss mid-infrared waveguides fabricated on a Ge-rich SiGe strain-relaxed buffer grown on an industrial-scale 200 mm wafer, with propagation losses below 0.5 dB/cm for 5-7 µm wavelengths and below 5 dB/cm up to 11 µm. Investigation reveals free-carrier absorption as the primary loss factor for 5-6.5 µm and silicon multiphonon absorption beyond 7 µm wavelength. This result establishes a foundation for a scalable, silicon-compatible mid-infrared platform, enabling the realisation of photonic integrated circuits for various applications in the mid-infrared spectral region, from hazard detection to spectroscopy and military imaging.
  • Zugangsstatus: Freier Zugang