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Okamoto, Kazumasa; Kawai, Shunpei; Ikari, Yuta; Hori, Shigeo; Konda, Akihiro; Ueno, Koki; Arai, Yohei; Ishino, Masahiko; Dinh, Thanh-Hung; Nishikino, Masaharu; Kon, Akira; Owada, Shigeki; Inubushi, Yuichi; Kinoshita, Hiroo; Kozawa, Takahiro

Dependence of dose rate on the sensitivity of the resist under ultra-high flux extreme ultraviolet (EUV) pulse irradiation

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  • Medientyp: E-Artikel
  • Titel: Dependence of dose rate on the sensitivity of the resist under ultra-high flux extreme ultraviolet (EUV) pulse irradiation
  • Beteiligte: Okamoto, Kazumasa; Kawai, Shunpei; Ikari, Yuta; Hori, Shigeo; Konda, Akihiro; Ueno, Koki; Arai, Yohei; Ishino, Masahiko; Dinh, Thanh-Hung; Nishikino, Masaharu; Kon, Akira; Owada, Shigeki; Inubushi, Yuichi; Kinoshita, Hiroo; Kozawa, Takahiro
  • Erschienen: IOP Publishing, 2021
  • Erschienen in: Applied Physics Express, 14 (2021) 6, Seite 066502
  • Sprache: Ohne Angabe
  • DOI: 10.35848/1882-0786/abfca3
  • ISSN: 1882-0786; 1882-0778
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: Abstract Efforts are being focused on increasing the power of extreme ultraviolet (EUV) light sources used in semiconductor manufacturing to increase the throughput. As a result, the investigation of the effect of high power sources on resist materials is a critical issue. A chemically amplified resist (CAR) and a non-CAR were irradiated with 13.5 nm EUV high-flux pulses from a soft X-ray free-electron laser (FEL). In the non-CAR, the positive-tone resist (ZEP520A) exhibited lower sensitivity at high irradiation densities, while the negative-tone resist exhibited a higher sensitivity. In addition, the dose rate did not considerably affect the sensitivity of the CAR.