Beschreibung:
<jats:title>Abstract</jats:title>
<jats:p>Time-resolved photoluminescence and capacitance-voltage measurement were performed on p-type GaN and InGaN films to study the minority carrier recombination mechanism. The minority carrier lifetime (<jats:italic>τ</jats:italic>
<jats:sub>PL</jats:sub>) for p-GaN with a Mg concentration of 1.7 × 10<jats:sup>19</jats:sup> cm<jats:sup>−3</jats:sup> was 46 ps. The non-radiative recombination due to gallium vacancies (<jats:italic>V</jats:italic>
<jats:sub>Ga</jats:sub>)-related defects is confirmed to dominate the minority carrier transport process. To suppress the formation of <jats:italic>V</jats:italic>
<jats:sub>Ga</jats:sub> defects, the indium atoms were added into p-GaN. As a consequence, the <jats:italic>V</jats:italic>
<jats:sub>Ga</jats:sub>-related non-radiative recombination centers were reduced from 8 × 10<jats:sup>15</jats:sup> to 5 × 10<jats:sup>14 </jats:sup>cm<jats:sup>−3</jats:sup> and a record long <jats:italic>τ</jats:italic>
<jats:sub>PL</jats:sub> of 793 ps was obtained for p-In<jats:sub>0.035</jats:sub>Ga<jats:sub>0.95</jats:sub>N film.</jats:p>