Beschreibung:
<jats:p>Understanding the atomic movements of simultanous diffusion of dopant (B) and point
defects (V, I) in silicon is of great importance for both experimental and theoretical diffusion
studies. This paper presents the atomistic dynamic diffusion modelling of boron (B), self-interstitial
(I) and vacancy (V) process in silicon based on simultaneous diffusion of boron dopant and point
defects based on a previous developed theory. The simulation is based on the random walk theory
with three main diffusion mechanisms: namely vacancy, interstitial and interstitialcy mechanism.
The migration frequencies of dopant and point defects have been programmed based on the
experimental diffusion data of boron, vacancy and Si self-interstitial. This simulation procedure can
be seen very clearly about the atomic movements, the interactions between dopant and point defects
via three diffusion mechanisms. The diffusion depth of B, V, I in very short time can be estimated
from the simulation picture on the screen. The simulation results reflect the simultaneous diffusion
as well as the interaction of boron and point defects via the three diffusion mechanisms. The point
defects (V, I) were generated during the dopant diffusion and they diffused further into the depth as
shown in the results of the simulation as well as in the previous published experimental findings.</jats:p>