Erschienen in:
Materials Science Forum, 527-529 (2006), Seite 1243-1246
Sprache:
Nicht zu entscheiden
DOI:
10.4028/www.scientific.net/msf.527-529.1243
ISSN:
1662-9752
Entstehung:
Anmerkungen:
Beschreibung:
The potential of SiC MESFETs has been demonstrated for high frequencyapplications on several circuits in the 1-5 GHz frequency range. Although MESFET structuresare conventionally used for RF applications, in this paper we report a low voltage (180V)power switch and its current limiting application based on a double gate MESFET structure,showing enhanced forward and blocking capabilities. The reported devices utilize a thinhighly doped p-type layer implanted at high energy as buffer layer. Various layouts have beenfabricated, varying the gate length; with either a single gate (p-buried layer connected tosource) or double gate (one Schottky, and the second on the P-buried layer). Gate RESURFfield-plate variation has been also included at the gate electrode. The I(V) electricalcharacterization validates the double gate configuration benefits. This double gate structureshows a higher gate transconductance than the single gate one. High voltage measurements inconducting mode (180V, 160mA/mm, 30W/mm) confirm the operation of the MESFET as acurrent limiting device, with excellent gate control capabilities at temperature up to 190°C.