Beschreibung:
<jats:p>This paper presents the experimental results of static and dynamic characteristics of the newly developed 14 kV 4H-SiC high-speed drift step recovery diode (DSRD) for pulse power applications for the first time. The feature of the diode structure is to be designed based upon the p+/p-/n+ structure and is to make an additional extremely low doping and thin n-drift layer between the p-drift layer and n+ substrate. This device successfully exhibits higher breakdown voltage of 14kV and high-speed voltage pulse in a range of a few nanoseconds, simultaneously.</jats:p>