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Medientyp:
E-Artikel
Titel:
Extended Hydrodynamical Model of Carrier Transport in Semiconductors
Beteiligte:
Anile, Angelo Marcello;
Romano, Vittorio;
Russo, Giovanni
Erschienen:
Society for Industrial and Applied Mathematics, 2000
Erschienen in:
SIAM Journal on Applied Mathematics, 61 (2000) 1, Seite 74-101
Sprache:
Englisch
ISSN:
0036-1399
Entstehung:
Anmerkungen:
Beschreibung:
A hydrodynamical model based on the theory of extended thermodynamics is presented for carrier transport in semiconductors. Closure relations for fluxes are obtained by employing the maximum entropy principle. The production terms are modeled by fitting the Monte Carlo data for homogeneously doped semiconductors. The mathematical properties of the model are studied. A suitable numerical method, which is a generalization of the Nessyahu-Tadmor scheme to the nonhomogeneous case, is provided. The validity of the constitutive relations has been assessed by comparing the numerical results with detailed Monte Carlo simulations.