> Details
A. De Saja, J
[Contributor];
Abdullaev, E. G
[Contributor];
Afanasev, A. M
[Contributor];
Aleksandrov, P. A
[Contributor];
Asahi, H
[Contributor];
Assenov, R
[Contributor];
Babulanam, S. M
[Contributor];
Bagraev, N. T
[Contributor];
Bahgat, A. A
[Contributor];
Benedix, M
[Contributor];
Bergner, H
[Contributor];
Blythe, H. J
[Contributor];
Bochniak, W
[Contributor];
Bostanjoglo
[Contributor];
Botros, K. Z
[Contributor];
Braun, R
[Contributor];
Bruynseraede, Y
[Contributor];
Bryant, F. J
[Contributor];
Brückner, V
[Contributor];
Camerlenghi, E
[Contributor];
Castaing, J
[Contributor];
Chakrabarty, D. K
[Contributor];
Cong Qui, Le
[Contributor];
Couderc, J. J
[Contributor];
[...]
Physica status solidi
- [Reprint 2021]
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- Media type: E-Book
- Title: Physica status solidi : Volume 90, Number 2: August 16
- Contributor: Bostanjoglo [Contributor]; Görlich [Editor]; A. De Saja, J [Contributor]; Abdullaev, E. G [Contributor]; Afanasev, A. M [Contributor]; Aleksandrov, P. A [Contributor]; Asahi, H [Contributor]; Assenov, R [Contributor]; Babulanam, S. M [Contributor]; Bagraev, N. T [Contributor]; Bahgat, A. A [Contributor]; Benedix, M [Contributor]; Bergner, H [Contributor]; Blythe, H. J [Contributor]; Bochniak, W [Contributor]; Botros, K. Z [Contributor]; Braun, R [Contributor]; Bruynseraede, Y [Contributor]; Bryant, F. J [Contributor]; Brückner, V [Contributor]; Camerlenghi, E [Contributor]; Castaing, J [Contributor]; Chakrabarty, D. K [Contributor]; Cong Qui, Le [Contributor]; Couderc, J. J [Contributor]; De Schutter, F [Contributor]; Demanet, C. M [Contributor]; Dolgarev, A. P [Contributor]; Dollingher, L [Contributor]; Dorikens, M [Contributor]; Dorikens-Vanpraet, L [Contributor]; Dudouit, I [Contributor]; Dybiec, H [Contributor]; Eftaxias, K [Contributor]; Emtsev, V. V [Contributor]; Endruschat, E [Contributor]; Esin, V. O [Contributor]; Feller-Kniepmeier, M [Contributor]; Fernengel, W [Contributor]; Fitting, H.-J [Contributor]; Gaber, M [Contributor]; García, S [Contributor]; Gaworzewski, P [Contributor]; Gelsdorf, F [Contributor]; Ghiordănescu, V [Contributor]; Gierak, Z [Contributor]; Gilabert, A [Contributor]; Gleitz, A [Contributor]; Govor, G. A [Contributor]; Gremenok, V. F [Contributor]; Grilli, E [Contributor]; Guseinov, G. D [Contributor]; Guzzi, M [Contributor]; Hariri, A. K [Contributor]; Hegenbarth, E [Contributor]; Helberg, H. W [Contributor]; Hennig-Michaeli, Ch [Contributor]; Hild, E [Contributor]; Hoyer, W [Contributor]; Hässner, A [Contributor]; Häszler, R [Contributor]; Imamov, R. M [Contributor]; Imhoff, D [Contributor]; Ismailzade, I. H [Contributor]; Jha, M. K [Contributor]; Jimenez, J [Contributor]; Jäckel, M [Contributor]; Karoza, A. G [Contributor]; Kassem, E. M [Contributor]; Katsnelson, E. Z [Contributor]; Kaufmann, Ch [Contributor]; Kazakov, V. G [Contributor]; Kerstan, F [Contributor]; Kessler, A [Contributor]; Kindyak, V. V [Contributor]; Klugmann, E [Contributor]; Koren, N. N [Contributor]; Korychev, D. V [Contributor]; Krause, M [Contributor]; Kronmüller, H [Contributor]; Kulyuk, L. L [Contributor]; Lachowicz, H. K [Contributor]; Lazaridou, M [Contributor]; Lebedev, A. A [Contributor]; Levade, C [Contributor]; Lippmann, H [Contributor]; Löffler, H [Contributor]; Löschke, K [Contributor]; Madhava, M. S [Contributor]; Mahmoud, S [Contributor]; Malsagov, A. U [Contributor]; Malyutin, V. I [Contributor]; Marais, M. A [Contributor]; Marcinkowski, M. J [Contributor]; Mashovets, T. V [Contributor]; Maslov, A. V [Contributor]; Matiev, A. Kh [Contributor]; Matz, W [Contributor]; Mayer, J [Contributor]; Melzer, I [Contributor]; Michalk, C [Contributor]; Milczarek, J. J [Contributor]; Moldovanova, M [Contributor]; Moroń, J. W [Contributor]; Mrsagatov, S. A [Contributor]; Mukhamedzhanov, E. Kh [Contributor]; Murthy, S. R [Contributor]; Müller, H [Contributor]; Nagai, H [Contributor]; Namazov, A. D [Contributor]; Neumann, H [Contributor]; Nojima, S [Contributor]; Northwood, D. O [Contributor]; Oishi, M [Contributor]; Opanowicz, A [Contributor]; Osvald, J [Contributor]; Pagnia, H [Contributor]; Pashaev, E. M [Contributor]; Pawełek, A [Contributor]; Pellissier, B [Contributor]; Pio, F [Contributor]; Polovinkina, V. I [Contributor]; Potseluiko, A. A [Contributor]; Pynko, V. G [Contributor]; Qi-Guang, Luo [Contributor]; Radautsan, S. I [Contributor]; Rao, K. S [Contributor]; Rao, T. S [Contributor]; Rapp, M [Contributor]; Rasek, J [Contributor]; Razik, N. A [Contributor]; Reynaud, F [Contributor]; Rong-Yao, Wang [Contributor]; Sabirov, K [Contributor]; Sadykhov, R. Z [Contributor]; Samedov, O. A [Contributor]; Satyanarayana, Ch [Contributor]; Scheibner, W [Contributor]; Schmalz, K [Contributor]; Scott, C. G [Contributor]; Segers, D [Contributor]; Sen, K [Contributor]; Shaisha, E. E [Contributor]; Sheinin, S. S [Contributor]; Smith, I. O [Contributor]; Somashekar, R [Contributor]; Sotnik, N [Contributor]; Stauss, H [Contributor]; Stephan, M [Contributor]; Strumban, E. E [Contributor]; Strydom, H. J [Contributor]; Stryjewski, W [Contributor]; Sunandana, C. S [Contributor]; Suwalski, J [Contributor]; Suárez, N [Contributor]; Szymczak, H [Contributor]; Sánchez, J. L [Contributor]; Słupkowski, T [Contributor]; Tarabaev, L. P [Contributor]; Tornow, W [Contributor]; Torres, A [Contributor]; Tsumbu, Mbungu- [Contributor]; Turilli, G [Contributor]; Tyagi, B. P [Contributor]; Umarov, S. Kh [Contributor]; Unnikrishnan, S [Contributor]; Urban, K [Contributor]; Urwank, P [Contributor]; Valiev, L. M [Contributor]; Van den Bosch, A [Contributor]; Vanderwalker, D. M [Contributor]; Vasilev, B. V [Contributor]; Vega, B [Contributor]; Vitovskii, N. A [Contributor]; Vlasenko, L. S [Contributor]; Walz, F [Contributor]; Wendrock, G [Contributor]; Wieser, E [Contributor]; Willis, A. J [Contributor]; Wobst, M [Contributor]; Xiao, Zhang [Contributor]; Xiojie, Zhang [Contributor]; Yuraev, N. D [Contributor]; Zhiheng, Lu [Contributor]; Zych, W [Contributor]
-
Published:
Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe]
- Published in: Physica status solidi ; Volume 90, Number 2 ; A
- Issue: Reprint 2021
- Extent: 1 Online-Ressource (504 p)
- Language: English
- DOI: 10.1515/9783112494806
- ISBN: 9783112494806
- Identifier:
- Keywords: SCIENCE / General
- Type of reproduction: [Online-Ausgabe]
- Origination:
-
Footnote:
In English
Mode of access: Internet via World Wide Web
- Description: Frontmatter -- Contents -- Original Pap -- Structure -- X-Ray Topography of Thin Subsurface Layers -- A Generalized Criterion for the Transition from the Layer to the Continuous Mechanism of Crystal Growth -- Application of X-Ray Photoelectron Energy Analysis to Depth-Selective Studies of the Subsurface-Layer Structure -- Influence of Permanent Electric Fields on the Successive Phase Transitions in the Solid Solutions of the System (Pb 1-x Bax) ZrO3 -- Mesomorphic Behaviour of Mixtures of Cetyl Alcohol and Dimethyl Sulfoxide -- Kinetics of Laser-Induced Liquid Metal Etching of a-Si Films -- Formation of MoSi2 by Light Pulse Irradiation -- Observation of Ni8Mo Ordered Phase in Ni-Mo Alloys -- Relation between the Pair Potentials VAA and VBB in Classical Statistical Physics of the Order-Disorder Transitions in Binary Substitutional Alloys -- Two-Step Ageing Treatments as a Means to Estimate the Zinc Content of Guinier-Preston Zones at Elevated Temperatures in an Al-15 at% Zn Alloy -- Investigation of the Structure of Molten Ge15Te85 in Dependence on Temperature -- Defects atomistic aspects -- On the Applicability of Conventional Contrast Theory to Weak Beam Images of Stacking Faults -- Phenomena of Structural Defect Recovery in Molybdenum -- The Spatial Distribution of Frenkel Pair Components Created in Germanium and Silicon under Irradiation -- Mobile Dislocation Density Variation during Strain Rate Change Evidenced by Acoustic Emission -- Study of an Experimental Technique for High-Temperature Deformation of Compound Semiconductors (Liquid Encapsulation) -- The Dependence of Li Phase Nucleation on the Structure of Partial Dislocations in Silicon -- Diffusion of Chromium in α-Iron -- Work-Hardening Rates during the Steady-State Creep of Aluminum and Alloys Determined from Stress-Change Tests -- Phase-Contrast Microscopy in Comparison with Other Light-Microscopic Methods for Direct Observation of Dislocation Lines in Single Crystals -- The Interaction between Slip and Twinning Systems in Natural Sphalerite Experimentally Deformed -- Positron Annihilation and Magnetic Susceptibility Measurements on Annealed Fast-Neutron Irradiated Crystalline Quartz -- Gold Solid Solution Decay in Silicon -- Strengthening of Alloys by Atomic Order -- Magnetism -- Magnetostriction of Ni-Zn and Co-Zn Ferrites -- The Coercive Field of the Partially Crystallized Amorphous Alloy Fe40Ni40P14B6 -- The Influence of Neutron Irradiation on the Magnetic Relaxation Spectrum of Commercial Non-Oriented Iron-Silicon Steel -- Magnetic Properties of Superconducting Oxygen-Doped Vanadium Foils -- Low-Temperature Mössbauer Measurement of a Polymeric Oxalate (2,2'-Bipyridine) Iron Compound -- Magnetic and Thermal Behaviour of the Amorphous Ferromagnet Fe79B16Si5 -- Extended electronic states and transitions -- Maximum Depth of Characteristic X-Ray Generation -- Simple Model for Thermoluminescence in Conductive Semiconductors -- ESR and Other Properties of Copper-Substituted Tellurium Vanadate Glasses -- On the Radiative Recombination in ZnIn2S4 -- Electric transport -- Effect of Pressure on Electrical Conductivity of TlInSe2 Single Crystals -- Electrical Properties of Polycrystalline Silicon in the Dark and under Illumination -- Bulk Conductivity, Polarization, and Thermally Stimulated Currents of Insulated Polar Crystals -- Electrical Conductivity of Polyester Polymer Containing Carbon Black -- Peculiarities in the Temperature Dependence of the Hall Coefficient in Tin Telluride -- On the Influence of Heating Rate in the Dipolar Relaxation of Ce2(SO4)3 9H2O Single Crystals -- AC and DC Superimposed AC Conduction in Sodium Fluoride Thin Films -- A Formulation for the Critical Temperature Tc of Ll2-Type Superconductors -- Device-related phenomena -- Influence oi Organic Molecules on the Current-Voltage Characteristic of Planar MIM Diodes -- The Use of Ion Implantation in the Fabrication of Cu2S-CdS Thin Film Solar Cells -- Short Notes -- On the Crystal Structure of Thin CdS Films Grown by Pulse Laser Evaporation -- precise Lattice Constant Determination of Hexagonal, Rhombohedral, and Tetragonal Crystals from X-Ray Powder Diffractometric Data -- Transitional Epitaxial Layers in Nickel Films Deposited in Vacuum on Complex LiF/NaCl Substrates -- An Ion Microprobe Mass Analysis of Indium Contacts on Mercury Cadmium Telluride -- Thermal Conductivity of LiKSO4 at Low Temperatures -- On the Filler Induced Modification of the Glass Transition Temperature and Hardness of an Epoxy Resin Composite Material -- Elastic Constants of the (RE)2Fe14B Tetragonal Compound (RE = Y, Nd, and Pr) -- On a Connection between Vacancy Formation Parameters and Melting Process in Rare Gas Solids -- Oxygen Donor Formation and Oxygen Precipitation in Czochralski Silicon Due to Heat Treatment at 600 to 800 °C -- The Observation on Atom Displacements of Silicon Highly Doped by Arsenic during Post-Annealing -- On the Mechanism of Domain Wall Break-Through from Localized Obstacles in Thin Magnetic Films -- Magnetic Properties of Fe80-xTMxB20 and Fe80-xMnxSi12B8 Amorphous Alloys -- Cd2-W - a New Material for Permanent Magnets? -- Preparation and Properties of Barium Substituted Gadolinium Cobaltite -- Peculiarities of Photomagnetization and Magnetoelectric Interactions in Ferrites -- Peculiarities of the First-Order Phase Transition in MnAs -- Magnetic Susceptibility and the Hall Effect in the FeCr2-xInxS4 (0≤x≤1) System -- Deduction of Semiconductor Parameters from the Frequency Dependence of Free Carrier Reflectivity -- Some Observations on the Absorption of Copper in Photochromic Glass -- Picosecond Spectroscopy and Photoconductivity of n-InP -- Microwave Conductivity of Dislocations in Deformed Silicon Single Crystals -- An Interfacial Property of the InGaAs/Semi-Insulating InP Structure Prepared by Metal Organic Vapor Phase Epitaxy -- Investigation of Illuminance-Voltage Characteristics for Thin-Film p-CdTe—n-CdTe—n-CdS Structures -- Influence of Electron Lithography on Electrical Parameters of MOS Structures -- Pre-Printed Titles
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